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Plessey rolls the dice, preps LED wafer fab

In the first quarter of 2013 Plessey Semiconductors Ltd. will begin production in Plymouth, England, of a range of high-brightness light emitting diodes (HB LEDs) based on gallium-nitride-on-silicon wafer technology. The company is aiming at the solid-state lighting market and is already demonstrating devices and is working on the final product specifications in collaboration with potential customers ready for sampling. It's a gamble for the company which already has one MOCVD machine – supplied by Aixtron SE (Herzogenrath, Germany) – installed for the creation of the GaN epitaxial layer on top of 6-inch diameter silicon wafers.

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