Due to the important role that they play in solid-state illumination, LEDs represent a promising candidate for next-generation lighting technology. However, confinement—which occurs due to the large difference in refractive index between the semiconductor and the ambient media—leads to severe total internal reflection at the interface, lowering the light extraction efficiency (LEE) of III-nitride LEDs. The light trapped inside of the LED device is eventually reabsorbed, thereby decreasing its efficiency. To achieve high light excitation and output performance, LEE enhancement is crucial.
Plasmonic nanostructures for enhanced LED efficiency
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