Fabricated via metalorganic vapor-phase epitaxy, the InGaN-based device contains both blue-light emitting quantum wells with a 20% indium content and 34% indium red quantum wells with a 34% indium content; to create broadband emission, the researchers created V-shaped pits in the structure below the quantum wells (which also had the effect of improving current injection). Combined, the monolithic LED emits light across the entire visible spectrum.
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