KAUST fabricates red InGaN-based micro-LEDs

Saudi Arabia’s King Abdullah University of Science and Technology (KAUST) has reported indium gallium nitride (InGaN)-based red micro-LEDs that they plan to integrate with green and blue micro-LEDs to create full-color micro-displays, according to Semiconductor Today.

Zhang’s team created and characterized a series of square devices with a side length of 98μm or 47μm. Their 47μm-long devices emitting light at a peak wavelength of 626nm were shown to have an external quantum efficiency (the number of photons emitted from the LED per electron injected into the device) of up to 0.87%.