Graphene-hBN breakthrough to spur new LEDs

In a discovery that could speed research into next-generation electronics and LED devices, a University of Michigan research team has developed the first reliable, scalable method for growing single layers of hexagonal boron nitride on graphene.

Graphene-hBN structures can power LEDs that generate deep-UV light, which is impossible in today's LEDs, said Zetian Mi, U-M professor of electrical engineering and computer science and a corresponding author of the study. Deep-UV LEDs could drive smaller size and greater efficiency in a variety of devices including lasers and air purifiers.

Bonding hBN and graphene together in smooth, single-atom-thick layers unleashes a treasure trove of exotic properties. In addition to deep-UV LEDs, graphene-hBN structures could enable quantum computing devices, smaller and more efficient electronics and optoelectronics and a variety of other applications.

The process, which can produce large sheets of high-quality hBN with the widely used molecular-beam epitaxy process, is detailed in a study in Advanced Materials.