Silanna UV Presents High Power 235nm far UVC LEDs Using New SPSL Technology
New technology that pushes the boundaries of far UVC LEDs to emit at shorter wavelengths, at higher power, and with longer lifetimes, will be presented by Silanna UV at the International Conference on UV LED Technologies & Applications (ICULTA) in Berlin, Germany from April 23 to 26, 2023.
This UVC LED technology from Silanna UV offers huge advantages for applications as diverse as disinfection, water quality monitoring, gas sensing, liquid chromatography, and chemical and biological analysis.
Old-fashioned AlGaN-based far UVC LEDs in general suffer from poor carrier injection, low light emission and high drive voltage, due to the inherit limitations of high Al-content AlGaN.
Silanna's new short period superlattice (SPSL) far UVC LED structure helps overcome these issues. In a SPSL device, composed of repeating layers of AlN and GaN, the presence of GaN maintains the TE dominance of the emission as well as lowering the activation energy of donors, resulting in more efficient devices compared to LEDs made with the conventional AlGaN technology. Furthermore, the emission wavelength can be easily tuned using the thickness of the GaN well, a process that is significantly easier to control than tuning of Al composition in the barrier and well.
This UVC LED technology from Silanna UV offers huge advantages for applications as diverse as disinfection, water quality monitoring, gas sensing, liquid chromatography, and chemical and biological analysis.
Old-fashioned AlGaN-based far UVC LEDs in general suffer from poor carrier injection, low light emission and high drive voltage, due to the inherit limitations of high Al-content AlGaN.
Silanna's new short period superlattice (SPSL) far UVC LED structure helps overcome these issues. In a SPSL device, composed of repeating layers of AlN and GaN, the presence of GaN maintains the TE dominance of the emission as well as lowering the activation energy of donors, resulting in more efficient devices compared to LEDs made with the conventional AlGaN technology. Furthermore, the emission wavelength can be easily tuned using the thickness of the GaN well, a process that is significantly easier to control than tuning of Al composition in the barrier and well.
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