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Most device physicists and engineers would agree that a native-substrate approach is the natural course for optimal semiconductor device fabrication and performance, since it guarantees atomic-level lattice and thermal-expansion matching as well as processing compatibility. However, for certain semiconductor materials, such as gallium nitride (GaN), this approach is not a straightforward option because the crystal is not readily found in nature and cannot be grown from the melt owing to the high vapor pressure of nitrogen.

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