InGaN-on-silicon LED from RoseStreet Labs reaches green and longer wavelengths

The world's first long-wavelength light-emitting diode (LED) devices using low-cost silicon wafer substrates were demonstrated by RoseStreet Labs. The company says its technology will find a home in the rapidly growing global LED lighting market where energy efficiency, low cost, and miniaturization are critical product characteristics. The technology, which enables green and longer-wavelength LEDs out to 575 nm, is a significant milestone considering that such longer-wavelength nitride-based LEDs have, until now, been challenging to fabricate compared to blue and ultraviolet (UV) LEDs due to decreasing quantum efficiencies.
The RoseStreet Labs (RSL) LEDs are based on the company's proprietary thin-film indium gallium nitride (InGaN) on silicon technology already used for high-efficiency photovoltaic (PV) applications and power devices. The LED devices are fabricated utilizing commercial-scale deposition tools at RSL's Nitride Research Center in Phoenix, AZ; the silicon substrates have a substantial cost advantage over the more traditional sapphire or silicon-carbide substrates typically used in LED fabrication.