Future of LEDs Gets Boost from Verification of Localization States in InGaN Quantum Wells

Light-emitting diodes made of indium gallium nitride provide better luminescence efficiency than many of the other materials used to create blue and green LEDs. But a big challenge of working with InGaN is its known dislocation density defects that make it difficult to understand its emission properties. In the Journal of Applied Physics, from AIP Publishing, researchers in China report an InGaN LED structure with high luminescence efficiency and what is believed to be the first direct observation of transition carriers between different localization states within InGaN. The localization states were confirmed by temperature-dependent photoluminescence and excitation power-dependent photoluminescence.