New Approach of InGaN Nanowire LEDs on Flexible Substrate

After publishing the research paper demonstrating Micro LED integration with amorphous silicon TFTs, the research team from the University of Waterloo in Canada further revealed its approach of transferring InGaN nanowire LEDs on flexible substrate without degrading optical performance of the LEDs when the substrate bends. Researchers use vertical GaN nanowire LEDs to separate the electrically active region of the LEDs from the bending platform. LEDs are transferred onto flexible polyethylene terephthalate (PET) with a “paste and cut” process. In this way, when the LEDs are integrated to flexible substrate, its emission performance degradation can be minimized.