Size effect of AlGaInP red micro-LEDs on silicon substrate investigated

In a study published in Results in Physics, a research group led by Liang Jingqiu from the Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) of the Chinese Academy of Sciences investigated the size effect of aluminum gallium indium phosphide (AlGaInP) red Micro-LEDs on silicon substrate.

The researchers adopted a low-damage etching formula and silicon substrates with better heat dissipation to avoid the light absorption properties of GaAs substrates.

Experimental results show that smaller micro-LEDs have smaller leakage current and larger series resistance and can withstand higher current density without the current crowding effect.