Osram boosts luminous efficacy of white and blue high-power LEDs by 7.5%

Osram Opto Semiconductors GmbH of Regensburg, Germany has improved the luminous efficacy of its high-power light-emitting diodes (LEDs) by as much as 7.5% by reducing the unwanted effect of efficiency droop at high currents. This development was made possible by optimized epitaxial processes. The unwanted drop in efficiency as the current density increases (i.e. droop) limits the maximum luminous efficacy of indium gallium nitride (InGaN)-based LEDs and is hence the subject of intense R&D activities worldwide. Osram Opto has now been able to reduce this effect considerably and therefore achieve a significant increase in the efficiency of the LEDs.