ALLOS and KAUST co-developing high-efficiency nitride-based red LEDs on silicon

Engineering firm ALLOS Semiconductors GmbH of Dresden, Germany is collaborating with professor Ohkawa and his team at Saudi Arabia’s King Abdullah University of Science and Technology (KAUST) to realize high-efficiency nitride-based red LEDs on large-diameter silicon substrates.

The researchers have already grown red LEDs on sapphire substrates and gallium oxide (Ga2O3) substrates (‘633-nm InGaN-based red LEDs grown on thick GaN underlying layers with reducing in-plane residual stress.