ALLOS and KAUST Are Working on High Efficiency Nitride-Based Red LEDs

ALLOS Semiconductors has engaged in a collaboration with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates.

The teams are addressing fundamental issues like the large lattice mismatch and the quantum-confined Stark effect (QCSE) which are preventing the adoption of red nitride-based LEDs for practical industry usage.

Dr. Nishikawa co-founder and CTO of ALLOS, commented: "From personal experience I am aware how challenging it is to realize high efficiency red LED. From ALLOS' side we can provide our established blue and green high quality GaN-on-Si micro LED epiwafers of up to 300 mm diameter. Furthermore we see the opportunity that our unique strengths in strain-engineeringfi can contribute to improved red LED performance."