Infineon And Panasonic Accelerate GaN Technology Development For 650 V GaN Power Devices

Infineon Technologies have signed an agreement for the joint development and production of the second generation (Gen2) of their gallium nitride (GaN) technology, offering higher efficiency and power density levels.

In accordance with market requirements, Gen2 will be developed as 650 V GaN HEMT. The devices will allow for ease of use and provide an improved price-performance ratio, targeting, amongst others, high- and low-power SMPS applications, renewables, motor drive applications.

Gallium nitride (GaN) offers fundamental advantages over silicon. The outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs qualify GaN HEMTs for high-speed switching. The resulting power savings and total system cost reduction, operation at higher frequencies, improved power density, and overall system efficiency make GaN a very attractive choice for design engineers.