Red InGaN μLEDs for Displays

University of California Santa Barbara (UCSB) in the USA suggests that indium gallium nitride (InGaN) red micro-sized light-emitting diodes (μLEDs) could provide a solution for displays, Semeconductor Today reports.
 
μLED-based displays should enable higher resolution, high contrast ratio, longer lifetime, and lower power consumption in comparison with traditional technologies such as liquid-crystal displays (LCDs).

Other potentials include wearable devices, ultra-large and very small display screens, augmented reality (AR), virtual reality (VR), and visible light communication.