Research team develops efficient GaN-based Green LEDs

 

A research team led by Shengjun Zhou at Wuhan University has reported developing efficient GaN-based green LEDs on sapphire substrate, according to Semiconductor Today.

They proposed a hybrid nucleation layer consisting of sputtered AlN and mid-temperature GaN components to boost quantum efficiency of GaN-based green LEDs.

An efficiency improvement of ~16 percent was demonstrated in the mass production by using the hybrid nucleation layer. This gain is attributed to the increased localisation depth and spatial overlapping of the electron and hole wave functions.